description the SLD104AU is a algaas laser diode developed for positive power supplies. in comparison with the sld104u, this device attains even lower power consumption levels. features low power consumption single power supply low noise microminiaturized package ( 5.6mm) structure algaas double hetero-type laser diode pin photo diode for laser optical power output monitor absolute maximum ratings (tc = 25?) optical power output p o max 5 mw reverse voltage v r ld 2 v pd 15 v operating temperature topr ?0 to +60 ? storage temperature tstg ?0 to +85 ? connection diagram algaas laser diode ?1 e89418c17-ps sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustr ating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. SLD104AU pin configuration 1 2 3 common ld pd 2 bottom view 1 3 1. ld anode 2. pd anode 3. common
2 SLD104AU electrical and optical characteristics (tc = 25 c) tc: case temperature unit max. typ. min. condition symbol ith iop vop im ? // ? s r ? 1 ? x, ? y, ? z ?? d a s s/n i d c t item 1.7 760 0.08 20 9 0.2 45 52 1.9 780 0.15 32 17 0.45 88 perpendicular parallel asymmetry position angle threshold current operating current operating voltage wavelength monitor current radiation angle (f. w. h. m. ? ) differential efficiency astigmatism signal to noise ratio dark current of pd capacitance of pd 60 70 2.5 800 0.4 45 25 20 150 3 0.7 15 150 30 ma ma v nm ma degree degree % m degree mw/ma m db na pf p o = 3mw p o = 3mw p o = 3mw p o = 3mw, v r = 5v p o = 3mw p o = 3mw p o = 3mw | z// z | f c = 7.5mhz ? f = 30khz p o = 4mw v r = 5v v r = 5v, f = 1mhz p o = 3mw positional accuracy power s l s r 0 // 7 7 ? 1 ? s r = | s l s r | s l + s r ? f. w. h. m. : full width at half maximum
3 SLD104AU example of representative characteristics 1.0 1.0 [v] 0 0.25 [ma] 0.25 pin diode current-voltage characteristics tc = 25 c p o = 3mw v i 0 20406080100 1 4 3 2 5 optical power output vs. forward current characteristics i f forward current [ma] p o optical power output [mw] tc = 25 c tc = 50 c 40 20 0 20 40 0 0.5 1.0 far field pattern (ffp) angle [degree] radiant intensity (optional scale) 780 781 782 783 784 relative light intensity vs. wavelength characteristics wavelength [nm] relative light intensity p o = 5mw 778 779 780 781 782 relative light intensity vs. waveform characteristics wavelength [nm] relative light intensity p o = 3mw // p o = 3mw 10 0 25 50 100 10 50 45 100 temperature characteristic of threshold current t c case temperature [ c] ith threshold current [ma]
4 SLD104AU notes on operation care should be taken for the following points when using this product. (1) this product corresponds to a class 3b product under iec60825-1 and jis standard c6802 "laser product emission safety standards". (2) eye protection against laser beams take care not to allow laser beams to enter your eyes under any circumstances. for observing laser beams, always use safety goggles that block laser beams. usage of ir scopes, ir cameras and fluorescent plates is also recommended for monitoring laser beams safely. (3) gallium arsenide this product uses gallium arsenide (gaas). this is not a problem for normal use, but gaas vapors may be potentially hazardous to the human body. therefore, never crush, heat to the maximum storage temperature or higher, or place the product in your mouth. in addition, the following disposal methods are recommended when disposing of this product. 1. engaging the services of a contractor certified in the collection, transport and intermediate treatment of items containing arsenic. 2. managing the product through to final disposal as specially managed industrial waste which is handled separately from general industrial waste and household waste. (4) prevention of surge current and electrostatic discharge laser diodes are most sensitive to electrostatic discharge among semiconductors. when a large current is passed through the laser diode for even an extremely short time, the strong light emitted from the laser diode promotes deterioration and then destruction of the laser diode. therefore, note that surge current should not flow to the laser diode driving circuit from switches and others. also, if the laser diode is handled carelessly, it may be destroyed instantly because electrostatic discharge is easily applied by a human body. therefore, be extremely careful about overcurrent and electrostatic discharge. (5) use for special applications this product is not designed or manufactured for use in equipment used under circumstances where failure may pose a risk to life and limb, or result in significant material damage, etc. consult your sony sales representative when investigating use for medical, vehicle, nuclear power control or other special applications. also, use the power supply that was designed not to exceed the optical power output specified at the absolute maximum ratings. laser radiation avoid direct exposure to beam laser diode laser diode avoid exposure laser radiation is emitted from this aperture. this product complies with 21 cfr part 1040.10 and 1040.11 sony corporation 6-7-35 kitashinagawa, shinagawa-ku,tokyo 141-0001 japan maximum output 80 mw wavelength 600 - 950 nm class iii b laser product
5 SLD104AU package outline unit: mm sony code eiaj code jedec code package mass m-259 1.0 0.4 0.5 90 ? 1 2 3 reference slot 5.6 0 0.05 4.4 max 3.8 max 0.6 0.25 0.5 min ? 1.26 3.1 max 1.2 0.1 6.5 1 3 2 3 0.45 pcd 2.0 ld chip & photo diode ? optical distance = 1.35 0.15 reference plane window glass 0.8 30 ? m-259 0.3g sony corporation
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